Polarization‐Enabled Piezoelectric Tellurium–Selenium (TeSe) Thin Films for Memory Switching and Artificial Synaptic Functions
Source: PubMed Central Open Access, NCBI / U.S. National Library of Medicine
ABSTRACT Two‐dimensional materials with piezoelectricity and polarization‐enabled electromechanical responses provide a promising basis for multifunctional electronics, including memory devices and neuromorphic computing. In this work, we explore cryogenic physical vapor deposition (cryogenic PVD)–grown TeSethin films, a tellurium‐based compound with a tunable bandgap and enhanced non‐centrosymmetry, and examine their polarization‐associated electromechanical characteristics. A 10 nm TeSefilm exhibits a clear switchable electromechanical response with a piezoelectric coefficient dof 33 pm/V, together with stable piezoresponse under ambient conditions. Introducing a Se ratio of 0.1 is found to enhance the polarization behavior and domain response while maintaining the crystalline quality of the TeSefilms. Memory devices based on TeSeshow retention beyond 2000 s and remain switchable up to 1000 cycles, with an HRS/LRS ratio exceeding 10under ± 20 V program/erase pulses when read at a drain voltage of 1 V. In addition, synaptic behavior is demonstrated with 92% image recognition accuracy at low energy consumption, suggesting potential for neuromorphic applications. These results highlight the potential of TeSefilms as a polarization‐enabled piezoelectric semiconductor system for future low‐power memory and computing applications. Here, we demonstrate and investigate polarization‐enabled electromechanical responses in cryogenic physical vapor deposition (cryogenic PVD)‐deposited
Abstract
ABSTRACT Two‐dimensional materials with piezoelectricity and polarization‐enabled electromechanical responses provide a promising basis for multifunctional electronics, including memory devices and neuromorphic computing. In this work, we explore cryogenic physical vapor deposition (cryogenic PVD)–grown TeSethin films, a tellurium‐based compound with a tunable bandgap and enhanced non‐centrosymmetry, and examine their polarization‐associated electromechanical characteristics. A 10 nm TeSefilm exhibits a clear switchable electromechanical response with a piezoelectric coefficient dof 33 pm/V, together with stable piezoresponse under ambient conditions. Introducing a Se ratio of 0.1 is found to enhance the polarization behavior and domain response while maintaining the crystalline quality of the TeSefilms. Memory devices based on TeSeshow retention beyond 2000 s and remain switchable up to 1000 cycles, with an HRS/LRS ratio exceeding 10under ± 20 V program/erase pulses when read at a drain voltage of 1 V. In addition, synaptic behavior is demonstrated with 92% image recognition accuracy at low energy consumption, suggesting potential for neuromorphic applications. These results highlight the potential of TeSefilms as a polarization‐enabled piezoelectric semiconductor system for future low‐power memory and computing applications. Here, we demonstrate and investigate polarization‐enabled electromechanical responses in cryogenic physical vapor deposition (cryogenic PVD)‐deposited TeSethin films, a tellurium‐based compound with a tunable bandgap and enhanced non‐centrosymmetry. Specifically, a 10 nm TeSethin film exhibits a clear switchable electromechanical response with a piezoelectric coefficient dof 33 pm/V and a stable piezoresponse under ambient conditions. Se incorporation enhances polarization and domain behavior while preserving crystallinity. TeSememory devices achieve >2000 s retention, >1000‐cycle endurance, HRS/LRS > 10, and 92% image recognition accuracy at low energy, highlighting potential for scalable, low‐power computing and memory systems in future multifunctional electronic applications. advs75407-abs-0001 graphical